Pankaj tiwari karunesh saxena

The analog performances which are studied are transconductance gm, intrinsic speed ftthermal noise spectral density Sn and flicker noise spectral density Sf.

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Rauthan Show Abstract Heterojunction solar cells have shown a promising comparable efficiency with the advantage of lower fabrication cost compared to the crystalline solar cells.

The simulation is made more realistic by incorporating the diffusion effects, space-chare effects and the realistic field and temperature dependent material parameters in SiC. The overall study indicates the superiority of the heterojunction diodes over their homojunction counterparts as far as negative resistance, device impedance and quality factor are concerned.

It has been highlighted that the scaling features and ultra-low on-resistance of the Trench Power MOSFETs can be advantageously utilized for powerloss management. Consequently, the motion of electrons and holes which are confined inside the dot can be analyzed by effective mass approximation applied to noninteracting particles.

The results of oxygen ion irradiation were compared with Co gamma irradiation in the same total dose range 1 Mrad to Mrad. The layout generated by the software was used to fabricate the amplifier.

The issues involved in integrating nanostructured oxides with MEMS technology are also addressed. The XRD pattern shows characteristic tin-oxide peaks with tetragonal structure.

Karunesh Tiwari ; N. Results obtained from our model show excellent agreement with numerical simulation data obtained using ATLAS and also with reported experimental data. However this is limited to device performance analysis.

The I-V characteristics of the fabricated UV sensor indicated a knee voltage of 0. The noise analysis shows that under similar operating condition, Si0. The electric field snap-shots and the large-signal impedance and admittance of the diode with current excitation are expressed in closed loop form.

Increasing channel length helps in improving the full bias stability of the device, albeit at the cost of Rsp. The gain versus bias and bandwidth versus gain characteristics of the device are also demonstrated for different active layer thicknesses of the APD.

Balakrishnan; Harishankar Sharma; B. Momentum analysis of all the transmission lines and stubs used in the design was carried out to take into account the parasitic effects.

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The films obtained were blackish in color. This is achieved by choosing the proper shape of piezoresistor, thickness of diaphragm and the position of the piezoresistor on the pressure sensor diaphragm. Annealed probe shows a repetitive trend in switching characteristics. For DC parameters, we analyzed the equations associated with the parameters and established an effective extraction procedure.

We have studied the effect of several factors e. The base current, collector current, DC current gain, AC voltage gain, unity current gain frequency and breakdown voltage is obtained for a 0. The process etch yield variation with applied RF bias is also reported.

Micro-electro-mechanical Systems MEMS technology has been adopted for the fabrication of the complete sensor for achieving the desired operating temperature at reduced power level. A model is used to estimate the avalanche build-up of carriers in the active multiplication layer considering the dead-space effect.

For the circular diaphragm, sensitivity of 3. Lokesh Kumar; Shailesh Kumar; S. Thus MeV proton beam causes molecular chain scissions in the top and the bottom PMMA layer in desired patterns in a single exposure which is not possible with other techniques such as e-beam lithography EBL or photolithography.

Narang; Sudeep Verma; R. Vandana Kumari ; Manoj Saxena; R. Atul Kumar Dwivedi ; R. Potential application of such micro-patterns is discussed. The new analysis uses peak electric field strength at avalanche breakdown, avalanche response time and noise-measure as critical material parameters for evaluating the quality of a semiconducting material for high-frequency, high-power operation of an IMPATT oscillator.

Based on a new analysis applicable to a wide range of semiconducting materials and by using the available measured physical parameters, it is shown that wide band gap semiconductor, SiC, offer significant advantages compared to conventional Si and Ge for these applications.

The observed degradation is mainly due to total ionizing dose. The resistance was observed to decrease by a factor of 3. Also halo implants are optimized to obtain a constant threshold voltage over a wide variation of channel lengths.

The small signal parameter extraction was also carried out extensively at various bias points and the bias dependency has been added for certain non-linear elements in the complete model.

There are many opportunities and challenges to improve the current technology. A completed design of the amplifier was further optimized. mr.

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sachin saxena 60 mr. karunesh kumar pandey riddhi tiwari mr. somnath tiwari 60 ridima sharma mr. ashish sharma 60 1 aaryan tiwary rakesh tiwari mof 1 aditya mohit saxena mohit saxena mof 1 aditya narayan raj kumar sharma mof 1 aditya pratap kudva pratap suresh kudva mon 1 ayushi pankaj jain pankaj jain mof 1 azhar jamal shaikh mohd.

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1 72 2 3 4 5 6 7 8 9. 65 76 Nipurn Jain Male Pankaj Jain 66 77 Jayesh Joshi Male Sachin Joshi 73 84 Sambhavi Tiwari Female Vinay Kumar Tiwari 74 85 Nainish Agarwal Male Ritesh Agarwal Aarika Saxena Female Atush Saxena Mohd Afraz Alam Male Shan E Alam. An Autonomous Institute established by Govt.

of M.P.(College with Potential for Excellence Status Conferred by UGC).

Pankaj tiwari karunesh saxena
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Karunesh Saxena, Pankaj Tiwari - [DOC Document]